Gallium (Ga) is a soft, silvery post-transition metal with a low melting point, typically produced as a high-purity byproduct of zinc and aluminum ore processing. It is primarily used in semiconductor and optoelectronic applications, where its ability to form direct bandgap compounds (particularly gallium arsenide and gallium nitride) makes it essential for high-frequency devices, photovoltaic cells, and light-emitting applications. Engineers select gallium-based semiconductors over silicon in demanding contexts where efficiency at high frequencies, radiation resistance, or direct light emission is critical, though cost and material availability remain significant trade-offs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 49.13 | GPa | — | ||
| ↳ | 45.19 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 2.377 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.3606 | - | — | ||
| ↳ | 0.4600 | - | — | ||
Shear Modulus(G)2 entries | 15.10 | GPa | — | ||
| ↳ | 6.450 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.018 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -0.1333 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.04287 | eV/atom | — |