Fe8O8F8 is an iron oxide fluoride compound that functions as a semiconductor material, combining iron oxide chemistry with fluorine substitution to modify electronic properties. This is a research-phase compound rather than a commercially established material; it belongs to the broader family of mixed-anion oxyfluorides that are of interest for energy storage, catalysis, and electronic device applications. Iron oxide fluorides are explored as alternatives to conventional semiconductors where fluorine doping can tune band gap, enhance ion mobility, or improve electrochemical performance compared to pure oxide phases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00550 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.712 | eV/atom | — |