Fe3 H4 O2 F8

semiconductor

· Fe3 H4 O2 F8

Fe₃H₄O₂F₈ is an experimental iron-based mixed-anion compound combining hydride, oxide, and fluoride ligands in a semiconductor framework. This represents an emerging class of multianion materials under investigation for next-generation electrochemical and photovoltaic applications, where the combination of different anionic species may enable tunable band gaps and enhanced ion transport compared to conventional binary or ternary semiconductors.

emerging energy storage electrodesphotovoltaic research materialsionic conductors (experimental)catalytic substrate developmentsolid-state battery components (research phase)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01190	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.802	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Fe3 H4 O2 F8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control