F6Sn4I2 is a tin-iodine compound semiconductor that represents a halide perovskite or tin-based halide material class under investigation for optoelectronic applications. This composition falls within the broader family of lead-free halide semiconductors being researched as environmentally safer alternatives to conventional perovskites for photovoltaic and light-emission devices. The material is primarily of academic and developmental interest rather than established industrial production, with potential advantages in toxicity reduction compared to lead-based counterparts, though stability and performance optimization remain active research areas.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.12 | GPa | — | ||
Shear Modulus(G) | 12.37 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.536 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.942 | eV/atom | — |