F12 As2 I6

semiconductor

· F12 As2 I6

F12As2I6 is an inorganic semiconductor compound belonging to the halide perovskite family, specifically a mixed-halide arsenide iodide system. This is a research-stage material being investigated for optoelectronic and photovoltaic applications, offering potential advantages in bandgap tunability and light-absorption characteristics compared to conventional semiconductors. The material's multi-component composition allows engineering of electronic properties for specialized photonic devices, though long-term stability and manufacturability remain active areas of development in the materials research community.

photovoltaic researchoptoelectronic deviceslight-emitting applicationsbandgap engineeringthin-film semiconductorsexperimental photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	15.63	GPa	—
Shear Modulus(G)	6.800	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.194	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.473	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

F12 As2 I6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control