EuN is a rare-earth nitride semiconductor compound composed of europium and nitrogen, belonging to the family of lanthanide nitrides with potential for optoelectronic and spintronic applications. Currently primarily a research material rather than a widely commercialized industrial product, EuN is of interest for its unique magnetic and electronic properties that could enable next-generation devices in specialized fields where rare-earth semiconductors offer advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.128 | eV/atom | — |