ErBiW2O9

semiconductor

· ErBiW2O9

ErBiW2O9 is a ternary oxide semiconductor composed of erbium, bismuth, and tungsten. This is a research-phase compound belonging to the family of mixed-metal tungstate semiconductors, which are being investigated for their potential in photocatalytic and optoelectronic applications where rare-earth doping and bismuth-based structures offer tunable band gaps and enhanced charge carrier dynamics. The material is notable within the emerging class of complex oxide semiconductors for environmental remediation and energy conversion research, where multi-metal compositions can provide advantages over binary oxides in terms of crystal structure stability, photocatalytic efficiency, and tailored electronic properties.

photocatalytic water treatmentvisible-light photocatalysisoptoelectronic device researchrare-earth semiconductor compoundsenvironmental remediationfunctional ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.260	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ErBiW2O9

Electrical Properties

Regulatory Screening

Environmental

Export Control