Er5Ga2As is an intermetallic ceramic compound combining erbium, gallium, and arsenic, belonging to the rare-earth metallic arsenide family. This material is primarily of research and specialized optoelectronic interest, particularly for high-temperature semiconductor applications and potential photonic devices where rare-earth doping and compound semiconductors intersect. Engineers would consider Er5Ga2As in advanced applications requiring thermal stability and specific electronic properties that conventional III-V semiconductors cannot provide, though availability and processing maturity remain limited compared to mainstream alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.964 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7332 | eV/atom | — |