Er3 In1 C1

semiconductor

· Er3 In1 C1

Er₃In₁C₁ is a ternary carbide semiconductor compound combining erbium, indium, and carbon—a rare-earth metal carbide system typically investigated for advanced electronic and optoelectronic applications. This material family is primarily of research interest rather than established production use, with potential applications in high-temperature semiconductors, specialized thin-film devices, and rare-earth carbide physics studies where conventional silicon or gallium arsenide alternatives are insufficient.

high-temperature semiconductor researchrare-earth carbide systemsthin-film electronic devicesmaterials characterization studiesexperimental optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	42.13	GPa	—
Shear Modulus(G)	23.06	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00820	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.569	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er3 In1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control