Er3 As1

semiconductor

· Er3 As1

Er₃As₁ is a binary intermetallic compound composed of erbium and arsenic, belonging to the rare-earth arsenide family of semiconductors. This material is primarily of research interest for potential applications in thermoelectric devices and infrared optoelectronics, where rare-earth arsenides are explored for their narrow bandgap and carrier transport properties. While not yet widely deployed in mainstream engineering, Er₃As₁ represents a candidate material in the broader class of rare-earth pnictides being investigated for advanced solid-state energy conversion and quantum device applications.

thermoelectric devices (research)infrared detectors/emittersrare-earth semiconductorscompound semiconductor researchquantum materials explorationnarrow-gap semiconductor applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01190	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4290	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er3 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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