Er2 Se1 O2

semiconductor

· Er2 Se1 O2

Er₂Se₁O₂ is an erbium-based mixed anionic semiconductor compound combining rare-earth, chalcogenide, and oxide chemistry. This is a research-phase material primarily studied for optoelectronic and photonic applications, where the erbium dopant enables near-infrared emission relevant to telecommunications wavelengths. The layered oxychalcogenide structure offers potential for tunable band gaps and enhanced light-matter interactions compared to single-anion semiconductors, making it of interest in integrated photonics and quantum optics research communities.

Fiber optic communicationsPhotonic integrated circuitsNear-infrared emittersRare-earth doped semiconductorsResearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	123.3	GPa	—
Shear Modulus(G)	69.33	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.327	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.343	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er2 Se1 O2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control