Er2 Mg1 In1

semiconductor

· Er2 Mg1 In1

Er₂Mg₁In₁ is a ternary intermetallic compound combining erbium (rare-earth), magnesium, and indium phases. This is a research-stage material studied primarily in solid-state physics and materials science for its potential as a semiconducting intermetallic with rare-earth dopant characteristics. While not yet established in mainstream engineering applications, materials in this chemical family are of interest for thermoelectric conversion, magnetism studies, and specialized electronic devices where rare-earth alloying can enhance performance in extreme or low-temperature environments.

thermoelectric devices (research)rare-earth semiconductorscryogenic electronicssolid-state physics experimentsintermetallic phase studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00570	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er2 Mg1 In1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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