Er10 Ga6

semiconductor

· Er10 Ga6

Er10Ga6 is an experimental intermetallic compound composed of erbium and gallium, belonging to the rare-earth semiconductor material family. This material is primarily of research interest for potential applications in high-temperature electronics and photonic devices, where the combination of rare-earth and semiconductor properties could enable performance advantages over conventional semiconductors, though it remains in early-stage development with limited industrial deployment.

High-temperature semiconductorsPhotonic device researchRare-earth electronicsInfrared opticsExperimental compoundsMaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Er10 Ga6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control