Er1Ga3 is an intermetallic compound composed of erbium and gallium, belonging to the rare-earth–group III semiconductor family. This material is primarily of research interest for potential applications in optoelectronics and high-temperature semiconducting devices, where rare-earth gallium compounds are explored for their unique electronic and thermal properties that may offer advantages over conventional semiconductors in specialized niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 68.90 | GPa | — | ||
Shear Modulus(G) | 36.48 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5060 | eV/atom | — |