Er1 Bi2 Cl1 O4
semiconductorEr₁Bi₂Cl₁O₄ is an erbium-bismuth oxychloride semiconductor compound, representing a mixed-metal halide-oxide material class that has been explored primarily in materials science research rather than established industrial production. This compound belongs to the broader family of rare-earth and post-transition metal semiconductors, which are investigated for their potential in photonic, electronic, and optoelectronic applications where conventional semiconductors face limitations. While not yet commonplace in production engineering, materials in this chemical family are of interest for next-generation photocatalysis, solid-state lighting, and radiation detection where the combination of rare-earth and bismuth elements can offer tunable bandgaps and enhanced light-matter interactions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |