Dy₄Mn₄O₁₄ is a mixed-valence manganese oxide semiconductor containing dysprosium, a rare-earth element, synthesized primarily for research applications in functional ceramics and quantum materials. This compound belongs to the family of rare-earth manganates and is investigated for its potential in magnetic, electronic, and thermoelectric devices, though it remains largely in the research phase rather than established industrial production. The dysprosium doping modifies the electronic structure and magnetic properties compared to undoped manganese oxides, making it relevant for exploring next-generation solid-state applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00340 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.831 | eV/atom | — |