Dy₄Cd₂Se₈ is a quaternary semiconductor compound combining dysprosium (a rare earth element), cadmium, and selenium in a layered or complex crystal structure. This is a research-phase material studied primarily for its potential in optoelectronic and photovoltaic applications, where the rare earth dopant and II-VI semiconductor base offer tunable electronic and optical properties. The material belongs to the broader family of rare-earth-doped chalcogenides, which show promise for infrared emitters, detectors, and next-generation solar cells where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3893 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.548 | eV/atom | — |