Dy3Al0.5SiS7 is a rare-earth thiophosphate semiconductor compound combining dysprosium, aluminum, and silicon with sulfur in a mixed-anion lattice structure. This is an experimental research material belonging to the rare-earth chalcogenide family, primarily of interest for next-generation optoelectronic and photonic applications where the unique electronic band structure and rare-earth dopant properties offer potential advantages in light emission, detection, or nonlinear optical response.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.220 | eV | — |