Dy3Al0.5Si1S7
semiconductorDy3Al0.5Si1S7 is a rare-earth sulfide semiconductor compound combining dysprosium with aluminum and silicon in a sulfide matrix, representing an experimental material from the broader family of rare-earth chalcogenides. This composition lies within research investigations of wide-bandgap semiconductors and rare-earth optical materials, which are pursued for their potential in high-temperature electronics, photonic devices, and specialized optoelectronic applications where conventional semiconductors reach performance limits. The material's relevance stems from dysprosium's strong magnetic and optical properties combined with the wide-bandgap characteristics of sulfide host lattices, though practical applications remain largely in the research phase pending demonstration of scalable synthesis and device-level performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |