Dy3 Ga1 C1

semiconductor

· Dy3 Ga1 C1

Dy3Ga1C1 is a rare-earth metal carbide compound belonging to the ternary carbide family, combining dysprosium (a lanthanide), gallium, and carbon. This is a research-phase material studied for its potential in high-temperature structural applications and electronic devices; it remains primarily in academic investigation rather than established industrial production. The material's rare-earth content and ternary composition suggest potential utility in advanced ceramics, refractory applications, or specialized semiconductor contexts, though applications and performance advantages versus conventional alternatives require further development.

high-temperature ceramics researchrare-earth compound developmentrefractory materials explorationadvanced semiconductor researchspecialty carbide applicationsmaterials science development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	46.67	GPa	—
Shear Modulus(G)	27.04	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04210	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.146	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Dy3 Ga1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control