CuPS3 is a layered transition metal chalcogenide semiconductor composed of copper and phosphorus sulfide, belonging to the family of two-dimensional van der Waals materials with potential for electronic and optoelectronic applications. Currently primarily investigated in research settings, this material is being explored for its tunable band gap, anisotropic transport properties, and potential in next-generation thin-film devices; it represents a promising candidate in the broader push to develop alternative semiconductors beyond conventional silicon for flexible electronics, photodetectors, and low-dimensional device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.054 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.200 | eV | Measured | ||
| ↳ | 1.143 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 8.428 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.2525 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data