CuNbOFN

semiconductor

· CuNbOFN

CuNbOFN is an experimental ternary oxide-nitride semiconductor compound combining copper, niobium, oxygen, and nitrogen elements. This material family is under active research for photocatalytic and optoelectronic applications, representing an emerging alternative to traditional semiconductors by leveraging mixed anion chemistry to achieve band-gap engineering and enhanced charge separation. Its development is driven by the need for improved visible-light photocatalysts and next-generation thin-film devices where conventional binary semiconductors show performance limitations.

photocatalytic water splittingvisible-light photocatalysisthin-film optoelectronicsenvironmental remediationresearch-stage solar applicationsnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	-4.410e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuNbOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control