CuInO2F is a mixed-valent copper-indium oxide fluoride ceramic compound, representing an emerging material class that combines ionic and covalent bonding characteristics across multiple metal centers. This compound is primarily under investigation in materials research for electronic and photonic applications, as the copper-indium oxide framework with fluoride substitution offers potential for tunable band gaps, ionic conductivity, and unique defect chemistry—properties that make it a candidate for next-generation solid-state devices where conventional semiconductors or standard ceramics fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9677 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.000 | eV/atom | — |