CuHoO3

semiconductor

· CuHoO3

CuHoO₃ is a mixed-metal oxide semiconductor combining copper and holmium in a perovskite-related crystal structure. This is primarily a research compound investigated for potential optoelectronic and magnetic applications rather than an established industrial material. The copper-rare earth oxide family is of interest for photocatalysis, magnetic devices, and next-generation semiconductor devices, though practical engineering use remains limited pending further development and property optimization.

photocatalytic applicationsmagnetic device researchrare-earth semiconductor developmentoptoelectronic researchmaterials characterization studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3840	eV	—
Magnetic Moment(μB)	0.3990	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.075	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuHoO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control