CuGdO3 — Properties & Data | MatWorld

CuGdO3

semiconductor

· CuGdO3

CuGdO3 is a ternary oxide semiconductor compound combining copper and gadolinium in a perovskite-related crystal structure. This material is primarily of research interest rather than established in commercial production, explored for its potential in optoelectronic and magnetic applications where the rare-earth gadolinium dopant can provide enhanced functional properties compared to simpler binary oxides.

experimental optoelectronicsmagnetic semiconductor researchthin-film device developmentrare-earth doped ceramicsphotocatalysis research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3420	eV	DFT · PBE
Magnetic Moment(μB)	0.4000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.036	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CuGdO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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