CuGaO2 is a ternary oxide semiconductor compound combining copper, gallium, and oxygen, belonging to the delafossite oxide family of materials. This is primarily a research and development material explored for transparent conducting oxide (TCO) applications and emerging optoelectronic devices, as it potentially offers an alternative to traditional indium tin oxide (ITO) with different electronic and optical characteristics. The material is notable in academic and advanced technology contexts for its potential in next-generation display technologies, photovoltaic windows, and other applications requiring both electrical conductivity and optical transparency, though it remains largely in the experimental phase compared to commercialized semiconductor options.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.470 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data