CuGa0.4In1.6S3.5
semiconductor· CuGa0.4In1.6S3.5
CuGa₀.₄In₁.₆S₃.₅ is a quaternary chalcogenide semiconductor compound combining copper, gallium, indium, and sulfur in a mixed-cation structure. This is a research-stage material being investigated for photovoltaic and optoelectronic applications, where tuning the gallium-to-indium ratio offers a path to engineer the bandgap and improve light absorption or emission characteristics compared to binary or ternary alternatives. The compound belongs to a family of earth-abundant, non-toxic absorber materials pursued as potential successors to cadmium-based and lead-based semiconductors in thin-film solar cells and light-emitting devices.
thin-film photovoltaicsbandgap engineeringoptoelectronic devicessolar absorber materialsexperimental semiconductorschalcogenide research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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