CuGa₀.₄In₁.₆S₃.₅ is a quaternary chalcogenide semiconductor compound combining copper, gallium, indium, and sulfur in a mixed-cation structure. This is a research-stage material being investigated for photovoltaic and optoelectronic applications, where tuning the gallium-to-indium ratio offers a path to engineer the bandgap and improve light absorption or emission characteristics compared to binary or ternary alternatives. The compound belongs to a family of earth-abundant, non-toxic absorber materials pursued as potential successors to cadmium-based and lead-based semiconductors in thin-film solar cells and light-emitting devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.550 | eV | — |