Cu₆O₂F₁₀ is a mixed-valence copper oxide fluoride compound with semiconductor characteristics, belonging to the family of metal oxyfluorides. This is primarily a research material rather than an established industrial compound; it represents exploration of layered copper oxide systems modified by fluorine incorporation, which can create novel electronic and ionic transport properties. Such materials are of interest in solid-state chemistry for potential applications in ion conductors, catalysis, and emerging electronic devices, though practical engineering deployment remains limited to specialized research contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00750 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.400 | eV/atom | — |