Cu4Si2S6 is a quaternary semiconductor compound combining copper, silicon, and sulfur elements, belonging to the family of mixed-metal chalcogenides. This material is primarily investigated in research contexts for photovoltaic and optoelectronic applications, where its tunable bandgap and potential for earth-abundant, non-toxic device architectures position it as an alternative to conventional semiconductor materials like CdTe or CIGS. Engineers consider this class of materials for next-generation solar cells and light-emitting devices where cost reduction, scalability, and environmental benignity are driving factors in material selection.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3770 | eV/atom | — |