Cu4As2 is an intermetallic semiconductor compound composed of copper and arsenic, belonging to the III-V and related compound semiconductor family. This material is primarily of research and laboratory interest rather than high-volume industrial production, with potential applications in optoelectronics and photovoltaic devices where its semiconductor bandgap properties could be leveraged. Engineers would consider Cu4As2 mainly in specialized contexts requiring arsenic-bearing semiconductors, though more established alternatives like GaAs and CdTe dominate practical photovoltaic and IR detector applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.04700 | eV/atom | — |