Cu3As1S4 is a quaternary semiconductor compound combining copper, arsenic, and sulfur in a defined stoichiometric ratio. This material belongs to the I-III-VI family of semiconductors and is primarily of research and developmental interest rather than established industrial production. The compound is investigated for potential applications in photovoltaic devices, thermoelectric energy conversion, and optoelectronic components where its bandgap and electronic structure may offer advantages over more conventional semiconductors, though practical applications remain limited due to toxicity concerns associated with arsenic and the challenge of scaling synthesis methods.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 73.07 | GPa | — | ||
Shear Modulus(G) | 24.28 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03220 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2500 | eV/atom | — |