Cu2SiHgS4 is a quaternary chalcogenide compound containing copper, silicon, mercury, and sulfur—a specialized material from the family of semiconducting and optoelectronic chalcogenides. This is primarily a research-phase material studied for potential applications in photovoltaics, thermoelectrics, and nonlinear optical devices, where the combination of mercury and sulfur can produce interesting band-gap and carrier transport properties. Engineers would consider this material in specialized optoelectronic or energy conversion contexts where the unique electronic structure of mixed-metal chalcogenides offers advantages over conventional semiconductors, though commercial deployment remains limited pending further development and toxicity/stability assessment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.67 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 27.36 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.108 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3710 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00500 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4019 | eV/atom | — |