Cu2 W2 O6 F4
semiconductor· Cu2 W2 O6 F4
Cu₂W₂O₆F₄ is a mixed-metal oxide fluoride semiconductor combining copper and tungsten in a layered crystal structure. This is a research-phase compound belonging to the family of transition-metal oxyfluorides, which are of growing interest for their tunable electronic and optical properties arising from the interplay between oxide and fluoride coordination chemistry. While not yet established in high-volume industrial production, materials in this class are being investigated for applications requiring controlled band gaps, photocatalytic activity, or ionic conductivity—areas where the fluoride substitution can significantly modify semiconductor behavior compared to conventional oxides.
photocatalytic materials (research)optoelectronic semiconductors (emerging)ion-conducting electrolytes (development)thin-film electronics (exploratory)next-generation solar/energy conversion (laboratory)functional ceramics (experimental)
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.