Cu2 In1 La1

semiconductor

· Cu2 In1 La1

Cu2In1La1 is a ternary intermetallic compound combining copper, indium, and lanthanum in a specific stoichiometric ratio. This is primarily a research-phase material studied for potential semiconductor and thermoelectric applications, belonging to the family of rare-earth transition metal intermetallics. While not yet established in mainstream industrial production, materials in this compound class are of interest for high-temperature electronics and energy conversion where the combination of rare-earth elements with transition metals can produce unique electronic band structures.

thermoelectric devices (research)high-temperature semiconductors (experimental)rare-earth intermetallicselectronic materials developmentlab-scale characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04240	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu2 In1 La1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control