Cu2As2Ba1 is an intermetallic semiconductor compound containing copper, arsenic, and barium, belonging to the family of ternary metal arsenides. This material is primarily of research and developmental interest rather than established in widespread industrial production, with investigation focused on its potential electronic and thermoelectric properties in solid-state applications. Engineers evaluating this compound would typically do so within exploratory materials programs aimed at discovering new semiconductors for energy conversion or niche electronic devices where its specific phase chemistry and band structure offer advantages over more conventional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00210 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5440 | eV/atom | — |