Cu0.8Ga1.2Se2.2

semiconductor

· Cu0.8Ga1.2Se2.2

Cu0.8Ga1.2Se2.2 is a copper-gallium selenide compound semiconductor with a composition near the chalcopyrite structure family, intentionally doped or off-stoichiometric to modify electronic properties for photovoltaic or optoelectronic applications. This material exists primarily in the research and development phase, where it is investigated as a thin-film absorber for next-generation solar cells and as a tunable wide-bandgap semiconductor for specialized optoelectronic devices; the gallium enrichment and selenium content variation relative to copper-only selenides allows researchers to engineer the bandgap and carrier transport properties for improved conversion efficiency or wavelength-selective photodetection compared to ternary CuGaSe₂.

photovoltaic absorber layersthin-film solar cellsphotodetectorsoptoelectronic researchbandgap engineeringhigh-efficiency concentrator cells

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.580	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu0.8Ga1.2Se2.2

Electrical Properties

Regulatory Screening

Environmental

Export Control