Cu0.2In1.8Se2.8

semiconductor

· Cu0.2In1.8Se2.8

Cu0.2In1.8Se2.8 is a quaternary semiconductor compound derived from the chalcopyrite family, specifically a copper-indium-diselenide (CIS) variant with off-stoichiometric copper and indium ratios. This material is primarily investigated in photovoltaic research as a thin-film absorber layer for high-efficiency solar cells, where the tuned bandgap and composition offer potential advantages in light absorption and charge carrier transport compared to binary or ternary alternatives. The copper-deficient, indium-rich composition represents an emerging experimental formulation within the CIGS (copper-indium-gallium-selenide) and related CIS material families, where compositional engineering is used to optimize efficiency and stability for next-generation solar technologies.

thin-film photovoltaicssolar cell absorber layersbandgap engineeringchalcopyrite semiconductorsresearch-stage materialshigh-efficiency solar devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.260	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cu0.2In1.8Se2.8

Electrical Properties

Regulatory Screening

Environmental

Export Control