Cu₀.₁In₁.₉Se₂.₉ is a copper-indium selenide semiconductor compound, a derivative of the CuInSe₂ family in which the copper content is reduced and indium is slightly enriched relative to the stoichiometric ternary composition. This material is primarily investigated in photovoltaic research, particularly for thin-film solar cell absorber layers where it may offer tuned bandgap and defect properties compared to the conventional CuInSe₂ baseline. The copper-deficient composition is of interest in laboratory and applied research settings for understanding how dopant/vacancy engineering affects charge transport and recombination in chalcopyrite absorbers, though it remains less established in high-volume industrial production than its parent compound.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.450 | eV | — |