CsZn4In5Te12

semiconductor
· CsZn4In5Te12

CsZn4In5Te12 is a quaternary semiconductor compound composed of cesium, zinc, indium, and tellurium elements, belonging to the family of complex chalcogenide semiconductors. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its tunable bandgap and potential for efficient light absorption make it a candidate for next-generation solar cells, photodetectors, and infrared sensing devices. Its notable advantage over simpler binary or ternary semiconductors lies in the ability to engineer electronic properties through compositional control of multiple cation sites, though it remains largely in the experimental phase rather than established industrial production.

experimental photovoltaic devicesinfrared photodetectorsnonlinear optical applicationsresearch thermoelectricsoptoelectronic thin filmsbandgap engineering studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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