CsZn₄In₅Se₁₂ is a quaternary semiconductor compound combining cesium, zinc, indium, and selenium in a complex crystal structure. This material belongs to the family of multinary chalcogenide semiconductors, currently of primary interest in research and development rather than established commercial production. The compound is investigated for potential applications in photovoltaic devices, particularly thin-film solar cells, and nonlinear optical components, where its tunable band gap and layered structure offer advantages over simpler binary or ternary semiconductors in controlling light absorption and carrier transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.610 | eV | — |