Cesium tantalum nitride (CsTaN₂) is a ternary ceramic compound combining a rare-earth alkali metal (cesium) with a refractory transition metal (tantalum) and nitrogen. This is a specialized research material, not widely deployed in production, but belongs to the family of advanced nitride ceramics being explored for high-temperature structural and electronic applications where extreme thermal stability and chemical inertness are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.643 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.256 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 16.94 | - | — | ||
| ↳ | 15.48 | - | — | ||
| ↳ | 11.28 range 6.302–16.25median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Piezoelectric Modulus(eij)2 entries | 0.09139 | C/m² | — | ||
| ↳ | 0.5333 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -206.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.105 | eV/atom | — |