CsInO2N is an experimental ternary ceramic compound containing cesium, indium, oxygen, and nitrogen, belonging to the oxynitride ceramic family. This material is primarily a research-phase compound under investigation for semiconductor and photocatalytic applications where mixed anionic frameworks (combining oxides and nitrides) can enable tunable band gaps and enhanced light absorption. Unlike conventional oxide ceramics, oxynitrides like CsInO2N are notable for their potential to bridge the properties of wide-bandgap oxides and narrow-bandgap nitrides, making them candidates for visible-light photocatalysis and next-generation optoelectronic devices, though industrial adoption remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.413 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.100 | eV/atom | — |