Cs6.40Na1.60Ga8Ge38
semiconductorCs6.40Na1.60Ga8Ge38 is a mixed-alkali clathrate semiconductor compound combining cesium and sodium cations within a germanium-gallium framework structure. This material belongs to the class of type-I clathrate semiconductors, which are primarily investigated for thermoelectric and optoelectronic applications due to their tunable band gaps and phonon-scattering properties enabled by the rattling alkali atoms within the cage structure. The cesium-sodium ratio and gallium doping level distinguish this composition for optimizing charge carrier mobility and thermal conductivity balance, making it a research-phase candidate for power generation from waste heat and solid-state cooling devices where conventional semiconductors show performance trade-offs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |