Cr₄Ga₂N₂ is a chromium gallium nitride compound semiconductor, part of the wider family of transition metal nitrides and III-V nitride materials. This is primarily a research compound with potential applications in high-temperature and high-frequency electronics, as it combines chromium's refractory properties with gallium nitride's semiconductor capabilities. The material remains experimental; it is being investigated for advanced device architectures where extreme operating conditions or novel electronic properties are required, rather than being established in mainstream industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00230 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3610 | eV/atom | — |