Cr₂In₄S₈ is a ternary chalcogenide semiconductor compound combining chromium, indium, and sulfur elements. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronic and thermoelectric device research. The chromium-indium-sulfide family is investigated for next-generation semiconductors where layered or complex crystal structures may offer tunable bandgaps and carrier transport properties distinct from conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00470 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6250 | eV/atom | — |