This compound is a mixed-metal oxide-fluoride semiconductor containing chromium, silicon, hydrogen, and oxygen with fluorine substitution. The material represents an experimental or research-phase composition, likely explored for its potential in semiconductor, photocatalytic, or optoelectronic applications where metal-fluoride and metal-oxide interfaces offer tunable electronic properties. The inclusion of chromium suggests potential interest in redox-active or colored semiconductor devices, while the silicon and fluorine chemistry may provide either structural stability or enhanced charge-carrier dynamics compared to conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.079 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.590 | eV/atom | — |