CoGaN3 is an experimental ternary nitride compound combining cobalt, gallium, and nitrogen, belonging to the wider family of III-V and transition-metal nitride semiconductors under investigation for advanced electronics and optoelectronics. While not yet commercialized at scale, this material is of research interest for potential applications in high-frequency devices, wide-bandgap semiconductors, and magnetic materials, where the cobalt doping of gallium nitride offers possibilities for tuning electronic and magnetic properties beyond conventional GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 5.578 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.300 | eV/atom | — |