Ce₃Al₁N₁ is a rare-earth aluminum nitride compound belonging to the ternary nitride semiconductor family, combining cerium with aluminum nitride chemistry. This material is primarily of research interest rather than established industrial production, with potential applications in optoelectronics and high-temperature semiconductor devices where rare-earth doping of nitride systems offers tunable electronic and photonic properties. Engineers exploring advanced wide-bandgap semiconductors or rare-earth-doped nitride materials for next-generation power electronics, UV emitters, or specialized thermal applications would evaluate this compound for its unique crystal structure and electronic characteristics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 86.03 | GPa | — | ||
Shear Modulus(G) | 49.76 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8020 | eV/atom | — |