CdSnO2S is a quaternary semiconductor compound combining cadmium, tin, oxygen, and sulfur—a mixed-valence oxide-sulfide system that bridges traditional II-IV-VI semiconductor chemistry. This material remains primarily in the research and development phase, studied for its potential as an earth-abundant alternative to conventional narrow-bandgap semiconductors, with particular interest in photovoltaic absorbers, thin-film optoelectronics, and photocatalytic applications. Its composite anionic framework (oxide + sulfide) offers tunable electronic properties and potential for cost-effective device manufacturing, though industrial deployment remains limited compared to established compound semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6000 | eV | — | ||
Magnetic Moment(μB) | -0.00000341 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7200 | eV/atom | — |