CdSnAs2 is a ternary III-V semiconductor compound combining cadmium, tin, and arsenic elements. This material belongs to the family of narrow-bandgap semiconductors and is primarily of research and specialized industrial interest rather than mainstream commercial production. It is explored for infrared detection, thermal imaging sensors, and narrow-bandgap optoelectronic devices where its electronic properties enable sensitivity in specific wavelength ranges; engineers consider it when conventional semiconductors like GaAs or InSb cannot meet stringent performance requirements for cryogenic or room-temperature infrared applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49.23 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 23.40 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.699 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 23.50 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7387 | C/m² | — | ||
Seebeck Coefficient(S) | -94.51 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1047 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.000660 | eV/atom | — |